IndiumV3, Chine, Analysis, bibRecord, 000B17

Integration of GaAs /In0.1Ga0.9As/AlAs resonance tunneling heterostructures into micro-electro-mechanical systems for sensor applications

Identifieur interne : 000B17 ( Chine/Analysis ); précédent : 000B16; suivant : 000B18

Integration of GaAs /In0.1Ga0.9As/AlAs resonance tunneling heterostructures into micro-electro-mechanical systems for sensor applications

Auteurs : RBID : Pascal:10-0144070

Descripteurs français

Pascal (Inist)
- Piézorésistance, Structure 2 barrières, Effet tunnel résonnant, Conductivité différentielle négative, Rapport signal bruit, Barrière potentiel, Gallium Indium Arséniure Mixte, Arséniure de gallium, Arséniure d'aluminium, Hétérostructure, Puits quantique, GaAs, AlAs.

English descriptors

KwdEn :
- Aluminium arsenides, Double barrier structure, Gallium Indium Arsenides Mixed, Gallium arsenides, Heterostructures, Negative differential conductivity, Piezoresistance, Potential barrier, Quantum wells, Resonant tunnelling, Signal-to-noise ratio.

Abstract

Double-barrier quantum-well resonant tunneling heterostructures of GaAs/In_0.1Ga_0.9As/AlAs have been used as pressure-sensing elements of designed micro-electro-mechanical systems. The static experiments have been conducted on the heterostructure, in both positive and negative differential resistance (PDR and NDR) regions, showing a piezoresistive coefficient of 3.85 x 10^-9Pa^-1, which is about seven times larger than that of piezoresistive silicon devices. At the same time, the devices also provided an improved dynamic response (119.6 μV . g^-1 V^-1) and signal-to-noise ratio (57 dB) in the NDR region.

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Pascal:10-0144070

Le document en format XML

<record><TEI><teiHeader><fileDesc><titleStmt><title xml:lang="en" level="a">Integration of G<sub>aA</sub>
s /In<sub>0.1</sub>
Ga<sub>0.9</sub>
As/AlAs resonance tunneling heterostructures into micro-electro-mechanical systems for sensor applications</title>
<author><name>CHENYANG XUE</name>
<affiliation wicri:level="1"><inist:fA14 i1="01"><s1>Key Laboratory of Instrumentation Science & Dynamic Measurement (North University of China), Ministry of Education</s1>
<s2>030051 Taiyuan, Shanxi</s2>
<s3>CHN</s3>
<sZ>1 aut.</sZ>
<sZ>2 aut.</sZ>
<sZ>3 aut.</sZ>
<sZ>5 aut.</sZ>
</inist:fA14>
<country>République populaire de Chine</country>
<wicri:noRegion>030051 Taiyuan, Shanxi</wicri:noRegion>
</affiliation>
<affiliation wicri:level="1"><inist:fA14 i1="02"><s1>National Key Laboratory for Electronic Measurement Technology (North University of China</s1>
<s2>030051 Taiyuan, Shanxi</s2>
<s3>CHN</s3>
<sZ>1 aut.</sZ>
<sZ>3 aut.</sZ>
<sZ>4 aut.</sZ>
<sZ>5 aut.</sZ>
</inist:fA14>
<country>République populaire de Chine</country>
<wicri:noRegion>National Key Laboratory for Electronic Measurement Technology (North University of China</wicri:noRegion>
</affiliation>
</author>
<author><name>JIE HU</name>
<affiliation wicri:level="1"><inist:fA14 i1="01"><s1>Key Laboratory of Instrumentation Science & Dynamic Measurement (North University of China), Ministry of Education</s1>
<s2>030051 Taiyuan, Shanxi</s2>
<s3>CHN</s3>
<sZ>1 aut.</sZ>
<sZ>2 aut.</sZ>
<sZ>3 aut.</sZ>
<sZ>5 aut.</sZ>
</inist:fA14>
<country>République populaire de Chine</country>
<wicri:noRegion>030051 Taiyuan, Shanxi</wicri:noRegion>
</affiliation>
<affiliation wicri:level="3"><inist:fA14 i1="03"><s1>Ecole Normale Supérieure, 24 rue Lhomond</s1>
<s2>75231 Paris</s2>
<s3>FRA</s3>
<sZ>2 aut.</sZ>
<sZ>6 aut.</sZ>
</inist:fA14>
<country>France</country>
<placeName><region type="region" nuts="2">Île-de-France</region>
<settlement type="city">Paris</settlement>
</placeName>
</affiliation>
</author>
<author><name>WENDONG ZHANG</name>
<affiliation wicri:level="1"><inist:fA14 i1="01"><s1>Key Laboratory of Instrumentation Science & Dynamic Measurement (North University of China), Ministry of Education</s1>
<s2>030051 Taiyuan, Shanxi</s2>
<s3>CHN</s3>
<sZ>1 aut.</sZ>
<sZ>2 aut.</sZ>
<sZ>3 aut.</sZ>
<sZ>5 aut.</sZ>
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<country>République populaire de Chine</country>
<wicri:noRegion>030051 Taiyuan, Shanxi</wicri:noRegion>
</affiliation>
<affiliation wicri:level="1"><inist:fA14 i1="02"><s1>National Key Laboratory for Electronic Measurement Technology (North University of China</s1>
<s2>030051 Taiyuan, Shanxi</s2>
<s3>CHN</s3>
<sZ>1 aut.</sZ>
<sZ>3 aut.</sZ>
<sZ>4 aut.</sZ>
<sZ>5 aut.</sZ>
</inist:fA14>
<country>République populaire de Chine</country>
<wicri:noRegion>National Key Laboratory for Electronic Measurement Technology (North University of China</wicri:noRegion>
</affiliation>
</author>
<author><name>BINZHEN ZHANG</name>
<affiliation wicri:level="1"><inist:fA14 i1="02"><s1>National Key Laboratory for Electronic Measurement Technology (North University of China</s1>
<s2>030051 Taiyuan, Shanxi</s2>
<s3>CHN</s3>
<sZ>1 aut.</sZ>
<sZ>3 aut.</sZ>
<sZ>4 aut.</sZ>
<sZ>5 aut.</sZ>
</inist:fA14>
<country>République populaire de Chine</country>
<wicri:noRegion>National Key Laboratory for Electronic Measurement Technology (North University of China</wicri:noRegion>
</affiliation>
</author>
<author><name>JIJUN XIONG</name>
<affiliation wicri:level="1"><inist:fA14 i1="01"><s1>Key Laboratory of Instrumentation Science & Dynamic Measurement (North University of China), Ministry of Education</s1>
<s2>030051 Taiyuan, Shanxi</s2>
<s3>CHN</s3>
<sZ>1 aut.</sZ>
<sZ>2 aut.</sZ>
<sZ>3 aut.</sZ>
<sZ>5 aut.</sZ>
</inist:fA14>
<country>République populaire de Chine</country>
<wicri:noRegion>030051 Taiyuan, Shanxi</wicri:noRegion>
</affiliation>
<affiliation wicri:level="1"><inist:fA14 i1="02"><s1>National Key Laboratory for Electronic Measurement Technology (North University of China</s1>
<s2>030051 Taiyuan, Shanxi</s2>
<s3>CHN</s3>
<sZ>1 aut.</sZ>
<sZ>3 aut.</sZ>
<sZ>4 aut.</sZ>
<sZ>5 aut.</sZ>
</inist:fA14>
<country>République populaire de Chine</country>
<wicri:noRegion>National Key Laboratory for Electronic Measurement Technology (North University of China</wicri:noRegion>
</affiliation>
</author>
<author><name>YONG CHEN</name>
<affiliation wicri:level="3"><inist:fA14 i1="03"><s1>Ecole Normale Supérieure, 24 rue Lhomond</s1>
<s2>75231 Paris</s2>
<s3>FRA</s3>
<sZ>2 aut.</sZ>
<sZ>6 aut.</sZ>
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<country>France</country>
<placeName><region type="region" nuts="2">Île-de-France</region>
<settlement type="city">Paris</settlement>
</placeName>
</affiliation>
</author>
</titleStmt>
<publicationStmt><idno type="inist">10-0144070</idno>
<date when="2010">2010</date>
<idno type="stanalyst">PASCAL 10-0144070 INIST</idno>
<idno type="RBID">Pascal:10-0144070</idno>
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<seriesStmt><idno type="ISSN">1862-6300</idno>
<title level="j" type="abbreviated">Phys. status solidi, A Appl. mater. sci. : (Print)</title>
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<profileDesc><textClass><keywords scheme="KwdEn" xml:lang="en"><term>Aluminium arsenides</term>
<term>Double barrier structure</term>
<term>Gallium Indium Arsenides Mixed</term>
<term>Gallium arsenides</term>
<term>Heterostructures</term>
<term>Negative differential conductivity</term>
<term>Piezoresistance</term>
<term>Potential barrier</term>
<term>Quantum wells</term>
<term>Resonant tunnelling</term>
<term>Signal-to-noise ratio</term>
</keywords>
<keywords scheme="Pascal" xml:lang="fr"><term>Piézorésistance</term>
<term>Structure 2 barrières</term>
<term>Effet tunnel résonnant</term>
<term>Conductivité différentielle négative</term>
<term>Rapport signal bruit</term>
<term>Barrière potentiel</term>
<term>Gallium Indium Arséniure Mixte</term>
<term>Arséniure de gallium</term>
<term>Arséniure d'aluminium</term>
<term>Hétérostructure</term>
<term>Puits quantique</term>
<term>GaAs</term>
<term>AlAs</term>
</keywords>
</textClass>
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</teiHeader>
<front><div type="abstract" xml:lang="en">Double-barrier quantum-well resonant tunneling heterostructures of GaAs/In<sub>0.1</sub>
Ga<sub>0.9</sub>
As/AlAs have been used as pressure-sensing elements of designed micro-electro-mechanical systems. The static experiments have been conducted on the heterostructure, in both positive and negative differential resistance (PDR and NDR) regions, showing a piezoresistive coefficient of 3.85 x 10<sup>-9 </sup>
Pa<sup>-1</sup>
, which is about seven times larger than that of piezoresistive silicon devices. At the same time, the devices also provided an improved dynamic response (119.6 μV . g<sup>-1</sup>
 V<sup>-1</sup>
) and signal-to-noise ratio (57 dB) in the NDR region.</div>
</front>
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<fA06><s2>2</s2>
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<fA08 i1="01" i2="1" l="ENG"><s1>Integration of G<sub>aA</sub>
s /In<sub>0.1</sub>
Ga<sub>0.9</sub>
As/AlAs resonance tunneling heterostructures into micro-electro-mechanical systems for sensor applications</s1>
</fA08>
<fA11 i1="01" i2="1"><s1>CHENYANG XUE</s1>
</fA11>
<fA11 i1="02" i2="1"><s1>JIE HU</s1>
</fA11>
<fA11 i1="03" i2="1"><s1>WENDONG ZHANG</s1>
</fA11>
<fA11 i1="04" i2="1"><s1>BINZHEN ZHANG</s1>
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<fA11 i1="05" i2="1"><s1>JIJUN XIONG</s1>
</fA11>
<fA11 i1="06" i2="1"><s1>YONG CHEN</s1>
</fA11>
<fA14 i1="01"><s1>Key Laboratory of Instrumentation Science & Dynamic Measurement (North University of China), Ministry of Education</s1>
<s2>030051 Taiyuan, Shanxi</s2>
<s3>CHN</s3>
<sZ>1 aut.</sZ>
<sZ>2 aut.</sZ>
<sZ>3 aut.</sZ>
<sZ>5 aut.</sZ>
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<fA14 i1="02"><s1>National Key Laboratory for Electronic Measurement Technology (North University of China</s1>
<s2>030051 Taiyuan, Shanxi</s2>
<s3>CHN</s3>
<sZ>1 aut.</sZ>
<sZ>3 aut.</sZ>
<sZ>4 aut.</sZ>
<sZ>5 aut.</sZ>
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<fA14 i1="03"><s1>Ecole Normale Supérieure, 24 rue Lhomond</s1>
<s2>75231 Paris</s2>
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<sZ>6 aut.</sZ>
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<fA21><s1>2010</s1>
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<fA45><s0>18 ref.</s0>
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<fA47 i1="01" i2="1"><s0>10-0144070</s0>
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<fA60><s1>P</s1>
</fA60>
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</fA66>
<fC01 i1="01" l="ENG"><s0>Double-barrier quantum-well resonant tunneling heterostructures of GaAs/In<sub>0.1</sub>
Ga<sub>0.9</sub>
As/AlAs have been used as pressure-sensing elements of designed micro-electro-mechanical systems. The static experiments have been conducted on the heterostructure, in both positive and negative differential resistance (PDR and NDR) regions, showing a piezoresistive coefficient of 3.85 x 10<sup>-9 </sup>
Pa<sup>-1</sup>
, which is about seven times larger than that of piezoresistive silicon devices. At the same time, the devices also provided an improved dynamic response (119.6 μV . g<sup>-1</sup>
 V<sup>-1</sup>
) and signal-to-noise ratio (57 dB) in the NDR region.</s0>
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<fC02 i1="01" i2="3"><s0>001B70C63H</s0>
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<fC03 i1="01" i2="3" l="FRE"><s0>Piézorésistance</s0>
<s5>03</s5>
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<fC03 i1="01" i2="3" l="ENG"><s0>Piezoresistance</s0>
<s5>03</s5>
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<fC03 i1="02" i2="X" l="FRE"><s0>Structure 2 barrières</s0>
<s5>04</s5>
</fC03>
<fC03 i1="02" i2="X" l="ENG"><s0>Double barrier structure</s0>
<s5>04</s5>
</fC03>
<fC03 i1="02" i2="X" l="SPA"><s0>Estructura 2 barrera</s0>
<s5>04</s5>
</fC03>
<fC03 i1="03" i2="3" l="FRE"><s0>Effet tunnel résonnant</s0>
<s5>05</s5>
</fC03>
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<s5>05</s5>
</fC03>
<fC03 i1="04" i2="X" l="FRE"><s0>Conductivité différentielle négative</s0>
<s5>06</s5>
</fC03>
<fC03 i1="04" i2="X" l="ENG"><s0>Negative differential conductivity</s0>
<s5>06</s5>
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<s5>06</s5>
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<s5>07</s5>
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<s5>07</s5>
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<s5>08</s5>
</fC03>
<fC03 i1="06" i2="3" l="ENG"><s0>Potential barrier</s0>
<s5>08</s5>
</fC03>
<fC03 i1="07" i2="X" l="FRE"><s0>Gallium Indium Arséniure Mixte</s0>
<s2>NC</s2>
<s2>NA</s2>
<s5>11</s5>
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<fC03 i1="07" i2="X" l="ENG"><s0>Gallium Indium Arsenides Mixed</s0>
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<fC03 i1="08" i2="3" l="ENG"><s0>Gallium arsenides</s0>
<s2>NK</s2>
<s5>15</s5>
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<fC03 i1="09" i2="3" l="FRE"><s0>Arséniure d'aluminium</s0>
<s2>NK</s2>
<s5>16</s5>
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<fC03 i1="09" i2="3" l="ENG"><s0>Aluminium arsenides</s0>
<s2>NK</s2>
<s5>16</s5>
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<fC03 i1="10" i2="3" l="FRE"><s0>Hétérostructure</s0>
<s5>17</s5>
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<s5>17</s5>
</fC03>
<fC03 i1="11" i2="3" l="FRE"><s0>Puits quantique</s0>
<s5>18</s5>
</fC03>
<fC03 i1="11" i2="3" l="ENG"><s0>Quantum wells</s0>
<s5>18</s5>
</fC03>
<fC03 i1="12" i2="3" l="FRE"><s0>GaAs</s0>
<s4>INC</s4>
<s5>52</s5>
</fC03>
<fC03 i1="13" i2="3" l="FRE"><s0>AlAs</s0>
<s4>INC</s4>
<s5>53</s5>
</fC03>
<fN21><s1>095</s1>
</fN21>
</pA>
</standard>
</inist>
</record>

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   |wiki=   *** parameter Area/wikiCode missing *** 
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Integration of GaAs /In0.1Ga0.9As/AlAs resonance tunneling heterostructures into micro-electro-mechanical systems for sensor applications

Integration of GaAs /In0.1Ga0.9As/AlAs resonance tunneling heterostructures into micro-electro-mechanical systems for sensor applications

Descripteurs français

English descriptors

Abstract

Links toward previous steps (curation, corpus...)

Links to Exploration step

Le document en format XML

Pour manipuler ce document sous Unix (Dilib)

Pour mettre un lien sur cette page dans le réseau Wicri